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NXP  PZTA42,115  Bipolar (BJT) Single Transistor, NPN, 300 V, 50 MHz, 1.2 W, 100 mA, 40 hFE

NXP PZTA42,115
Technical Data Sheet (97.20KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
300V
Transition Frequency ft:
50MHz
Power Dissipation Pd:
1.2W
DC Collector Current:
100mA
DC Current Gain hFE:
40hFE
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001

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Bipolar (BJT) Single Transistor, NPN, 300 V, 1.2 W, 100 mA, 40 hFE

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