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STB34NM60ND - 

MOSFET Transistor, N Channel, 29 A, 600 V, 0.097 ohm, 10 V, 4 V

STB34NM60ND - MOSFET Transistor, N Channel, 29 A, 600 V, 0.097 ohm, 10 V, 4 V

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
STB34NM60ND
Order Code:
2098137
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The STB34NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ V Power MOSFET produced using ST's MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low ON-resistance that is unrivalled among silicon-based Power MOSFET and superior switching performance with intrinsic fast-recovery body diode.
  • The worldwide best RDS (ON) area amongst the fast recovery diode device
  • 100% Avalanche tested
  • Low gate input resistance
  • The world's best RDS (ON) in TO-220 amongst the fast recovery diode devices
  • Extremely high dV/dt and avalanche capabilities

Applications

Industrial, Power Management

Product Information

:
N Channel
:
29A
:
600V
:
0.097ohm
:
10V
:
4V
:
190W
:
TO-263
:
3Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
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