STF11NM60ND - 

MOSFET Transistor, N Channel, 10 A, 600 V, 0.37 ohm, 10 V, 4 V

STF11NM60ND - MOSFET Transistor, N Channel, 10 A, 600 V, 0.37 ohm, 10 V, 4 V

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Product Overview

The STF11NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced ON-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
  • The worldwide best RDS (ON) area amongst the fast recovery diode device
  • 100% Avalanche tested
  • Low gate input resistance
  • Extremely high dV/dt and avalanche capabilities


Industrial, Power Management


Market demand for this product has caused an extension in lead times, delivery dates may fluctuate

Product Information

N Channel
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24 In stock

24 available for 4 - 6 business days delivery

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200 will be available for delivery on 11/Jun/2018

50 will be available for delivery on 24/Sep/2018

100 will be available for delivery on 15/Oct/2018

More stock available week commencing 3/12/18
HK$34.88 HK$ 34.88
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