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STMICROELECTRONICS  STW9N150  Power MOSFET, N Channel, 8 A, 1.5 kV, 1.8 ohm, 10 V, 4 V

STMICROELECTRONICS STW9N150
Technical Data Sheet (254.34KB) EN See all Technical Docs

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Product Overview

The STW9N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
  • 100% Avalanche tested
  • Avalanche ruggedness
  • Gate charge minimized
  • Very low intrinsic capacitance
  • High speed switching
  • Very low on-resistance

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
8A
Drain Source Voltage Vds:
1.5kV
On Resistance Rds(on):
1.8ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
320W
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.006588

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