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VISHAY  SQJ858AEP-T1-GE3  MOSFET Transistor, N Channel, 58 A, 40 V, 0.005 ohm, 10 V, 2 V

VISHAY SQJ858AEP-T1-GE3
Technical Data Sheet (184.73KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
58A
Drain Source Voltage Vds:
40V
On Resistance Rds(on):
0.005ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
48W
Transistor Case Style:
PowerPAK SO
No. of Pins:
8Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
AEC-Q101
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Applications

  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002