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IPB60R099C6ATMA1

Power MOSFET, N Channel, 650 V, 37.9 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount

INFINEON IPB60R099C6ATMA1

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IPB60R099C6ATMA1
Order Code:
2443389
Also Known As:
IPB60R099C6, SP000687468
Technical Datasheet:
IPB60R099C6ATMA1   Datasheet
See all Technical Docs

Product Overview

The IPB60R099C6 is a 650V CoolMOS™ N-channel Power MOSFET offers easy control of switching behaviour. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
  • Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)
  • Very high commutation ruggedness
  • Easy to use
  • Better light load efficiency
  • Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
  • Better performance in comparison to previous CoolMOS™ generations
  • More efficient, more compact, lighter and cooler
  • Improved power density
  • Improved reliability
  • General purpose part can be used in both soft and hard switching topologies

Applications

Industrial, Power Management, Alternative Energy, Consumer Electronics, Communications & Networking, Automotive

Footnotes

For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.

Product Information

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:
N Channel

:
650V

:
37.9A

:
0.09ohm

:
TO-263 (D2PAK)

:
Surface Mount

:
10V

:
3V

:
278W

:
3Pins

:
150°C

:
-

:
-

:
MSL 1 - Unlimited
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Technical Docs (2)

Also Known As

IPB60R099C6, SP000687468
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