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2N6052G
Bipolar (BJT) Single Transistor, PNP, -100 V, -12 A, 150 W, TO-3, Through Hole
- Manufacturer:
- ON SEMICONDUCTOR ON SEMICONDUCTOR
- Manufacturer Part No:
- 2N6052G
- Order Code:
- 2535602
- Technical Datasheet:
- 2N6052G Datasheet
Product Overview
The 2N6052G is a 12A PNP complementary silicon power Darlington Transistor designed for general-purpose amplifier and low frequency switching applications.
- Monolithic construction with built-in base-emitter shunt resistors
- High DC current gain (hFE = 3500 @ IC = 5A DC)
Applications
Industrial, Power Management
Product Information
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- PNP
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- -100V
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- -12A
- :
- 150W
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- TO-3
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- Through Hole
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- 2Pins
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- -
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- 100hFE
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- 200°C
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- -
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- -
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- -
Technical Docs (1)
55 In stock Need more?
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You can reserve stock now just order your desired quantity and checkout as normal. The quantity that cant be dispatched now will be placed on back order and sent as soon as we get a delivery from our supplier. You only get charged when the products are dispatched to you.
Extra stock is available upon order to the Supplier Lead Time which is approximately 27/09/21
55 available for 3 - 4 business days delivery
HK$69.30
Pricing is unavailable. Please contact customer services.
- Price for:
- Each
Multiple: 1 Minimum: 1
| Quantity | Price | Your Price |
|---|---|---|
| 1+ | HK$69.30 | |
| 10+ | HK$59.38 | |
| 25+ | HK$55.30 | |
| 100+ | HK$49.48 | |
| 300+ | HK$46.57 | |
| 500+ | HK$43.66 | |
| 1000+ | HK$40.04 | |
Pricing is unavailable. Please contact customer services.
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