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Quantity | Price |
---|---|
5+ | HK$3.380 |
10+ | HK$2.050 |
100+ | HK$1.020 |
500+ | HK$0.970 |
1000+ | HK$0.642 |
5000+ | HK$0.584 |
Price for:Each
Minimum: 5
Multiple: 5
HK$16.90
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N7002T
Order Code2322570
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id115mA
Drain Source On State Resistance1.6ohm
Transistor Case StyleSOT-523F
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max1.76V
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 2N7002T is a N-channel enhancement-mode FET with low ON-resistance and low gate threshold voltage.
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Ultra-small surface-mount package
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
115mA
Transistor Case Style
SOT-523F
Rds(on) Test Voltage
5V
Power Dissipation
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1.6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.76V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005