Silicon Carbide (SiC) MOSFETs & Modules

Filter(s) Applied

Power Dissipation

238W

			Price For		Quantity

SCTH40N120G2V-7	3758567RL Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 36 A 1.2 kV 0.07 ohm H2PAK	Each (Supplied on Cut Tape) Re-Reel Packaging Options	10+ HK$111.780	Min: 10 / Mult: 1	Single	N Channel	36A	1.2kV	0.07ohm	H2PAK	7Pins	18V	2.45V	238W	175°C	-
SCTH40N120G2V-7	3758567 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 36 A 1.2 kV 0.07 ohm H2PAK	Each (Supplied on Cut Tape) Cut Tape	1+ HK$118.420 5+ HK$114.770 10+ HK$111.780	Min: 1 / Mult: 1	Single	N Channel	36A	1.2kV	0.07ohm	H2PAK	7Pins	18V	2.45V	238W	175°C	-
G3F09MT12FB2	4716168 Data Sheet RoHS	GENESIC Silicon Carbide MOSFET Half Bridge N Channel 109 A 1.2 kV 0.0125 ohm Module	Each	1+ HK$1,009.310 5+ HK$972.840 10+ HK$968.190	Min: 1 / Mult: 1	Half Bridge	N Channel	109A	1.2kV	0.0125ohm	Module	18Pins	18V	4.3V	238W	175°C	SiCPAK F Series