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IPA65R190CFDXKSA1
Power MOSFET, N Channel, 700 V, 17.5 A, 0.171 ohm, TO-220, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIPA65R190CFDXKSA1
Order Code2443376
Also Known AsIPA65R190CFD, SP000905382
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | HK$28.040 |
| 10+ | HK$19.490 |
| 100+ | HK$15.460 |
| 500+ | HK$14.830 |
| 1000+ | HK$14.190 |
Price for:Each
Minimum: 1
Multiple: 1
HK$28.04
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPA65R190CFDXKSA1
Order Code2443376
Also Known AsIPA65R190CFD, SP000905382
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds700V
Continuous Drain Current Id17.5A
Drain Source On State Resistance0.171ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation34W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Product Overview
650V CoolMOS™ CFD2 power transistor is second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 device is the successor of 600V CFD with improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this product a clear advantage in comparison with competitor parts. Potential applications include telecom, server, solar, HID lamp ballast, LED lighting and eMobility.
- Limited voltage overshoot during hard commutation
- Significant Qi reduction compared to 600V CFD technology
- Tighter RDS(on) max to RDS(on) typ window
- Easy to design-in
- Lower price compared to 600V CFD technology
- Low switching losses due to low Qtr. at repetitive commutation on body diode
- Self-limiting di/dot and dv/dot
- Low Qoss
- Reduced turn on and turn of delay times
- Outstanding CoolMOS™ quality
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
17.5A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
34W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
700V
Drain Source On State Resistance
0.171ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003184