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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Single MOSFETs
                      Print Page

                      IRF1010EPBF

                      Power MOSFET, N Channel, 60 V, 81 A, 0.012 ohm, TO-220AB, Through Hole

                      INFINEON IRF1010EPBF
                      INFINEON IRF1010EPBF
                      INFINEON IRF1010EPBF
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerINFINEON
                      Manufacturer Part NoIRF1010EPBF
                      Order Code8647968
                      Also Known AsSP001569818
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      253 In Stock

                      Need more?

                      253 Delivery in 3-4 Business Days(UK stock)
                      QuantityPrice
                      1+HK$9.900
                      10+HK$7.170
                      100+HK$6.260
                      500+HK$5.550
                      1000+HK$5.040
                      5000+HK$4.770
                      Price for:Each
                      Minimum: 1
                      Multiple: 1
                      HK$9.90
                      Add Part No. / Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerINFINEON
                      Manufacturer Part NoIRF1010EPBF
                      Order Code8647968
                      Also Known AsSP001569818
                      Technical Datasheet

                      Data Sheet

                      Channel TypeN Channel
                      Drain Source Voltage Vds60V
                      Continuous Drain Current Id81A
                      Drain Source On State Resistance0.012ohm
                      Transistor Case StyleTO-220AB
                      Transistor MountingThrough Hole
                      Rds(on) Test Voltage10V
                      Gate Source Threshold Voltage Max4V
                      Power Dissipation170W
                      No. of Pins3Pins
                      Operating Temperature Max175°C
                      Product Range-
                      Qualification-
                      MSL-
                      SVHCNo SVHC (21-Jan-2025)

                      Product Overview

                      The IRF1010EPBF is a 60V single N-channel HEXFET Power MOSFET with advanced process technology. Advanced HEXFET® power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

                      • Ultra low on-resistance
                      • Dynamic dv/dt rating
                      • Fast switching
                      • Fully avalanche rated
                      • Industry-leading quality
                      • Planar MOSFET technology
                      • ±20V gate to source voltage
                      • 1.4W/°C linear derating factor
                      • 50A avalanche current (IAR)
                      • 0.75°C/W thermal resistance, junction to case
                      • 62°C/W thermal resistance, junction to ambient

                      Technical Specifications

                      Channel Type

                      N Channel

                      Continuous Drain Current Id

                      81A

                      Transistor Case Style

                      TO-220AB

                      Rds(on) Test Voltage

                      10V

                      Power Dissipation

                      170W

                      Operating Temperature Max

                      175°C

                      Qualification

                      -

                      SVHC

                      No SVHC (21-Jan-2025)

                      Drain Source Voltage Vds

                      60V

                      Drain Source On State Resistance

                      0.012ohm

                      Transistor Mounting

                      Through Hole

                      Gate Source Threshold Voltage Max

                      4V

                      No. of Pins

                      3Pins

                      Product Range

                      -

                      MSL

                      -

                      Technical Docs (2)

                      Technical Data Sheet EN

                      Simulation Model EN

                      Associated Products

                      3 Products Found

                      Legislation and Environmental

                      Country of Origin:
                      Country in which last significant manufacturing process was carried outCountry of Origin:
                      Mexico
                      Country in which last significant manufacturing process was carried out
                      Tariff No:85412900
                      US ECCN:EAR99
                      EU ECCN:NLR
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (21-Jan-2025)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Weight (kg):.002712
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