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IRFB7430PBF
Power MOSFET, N Channel, 40 V, 195 A, 0.0013 ohm, TO-220AB, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIRFB7430PBF
Order Code2253784
Also Known AsSP001551786
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | HK$27.380 |
| 10+ | HK$23.730 |
| 100+ | HK$20.080 |
| 500+ | HK$16.430 |
| 1000+ | HK$13.320 |
Price for:Each
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Multiple: 1
HK$27.38
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFB7430PBF
Order Code2253784
Also Known AsSP001551786
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id195A
Drain Source On State Resistance0.0013ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation375W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
Single N-channel StrongIRFET™ power MOSFET ideal for low frequency applications requiring performance and ruggedness. It is suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters and DC/AC inverters applications.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- High-current rating and high-current carrying capability package
- Product qualification according to JEDEC standard
- Softer body-diode compared to previous silicon generation
- Industry standard qualification level
- High performance in low frequency applications
- Increased power density
- Standard pinout allows for drop in replacement
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
195A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0013ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.2V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00195