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Quantity | Price |
---|---|
1+ | HK$165.350 |
10+ | HK$153.170 |
25+ | HK$148.330 |
50+ | HK$144.690 |
100+ | HK$140.350 |
Product Information
Product Overview
MT40A1G16TD-062E AAT:F automotive DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as an eight-bank DRAM for the x16 configuration and as a 16-bank DRAM for the x8 configurations. The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
- On-die, internal, adjustable VREFDQ generation, 1.2V pseudo open-drain I/O
- 8n-bit prefetch architecture, programmable data strobe preambles, output driver calibration
- Data strobe preamble training, command/address latency (CAL)
- Multipurpose register READ and WRITE capability, write levelling
- Self-refresh mode, low-power auto self-refresh (LPASR), temperature-controlled refresh (TCR)
- Fine granularity refresh, self refresh abort, maximum power saving
- Nominal, park, and dynamic on-die termination (ODT), 96-ball FBGA package
- Data bus inversion (DBI) for data bus, command/Address (CA) parity
- Databus write cyclic redundancy check (CRC), Per-DRAM addressability
- JEDEC JESD-79-4 compliant, sPPR and hPPR capability, AEC-Q100 qualified
Technical Specifications
DDR4
1G x 16bit
FBGA
1.2V
-40°C
-
16Gbit
1.6GHz
96Pins
Surface Mount
105°C
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate