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NVBG080N120SC1
SIC MOSFET, N-CH, 1.2KV, 30A, TO-263HV-7
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| Quantity | Price |
|---|---|
| 1+ | HK$251.970 |
| 5+ | HK$220.470 |
| 10+ | HK$182.680 |
| 50+ | HK$163.780 |
| 100+ | HK$151.180 |
| 250+ | HK$141.760 |
Price for:Each
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Multiple: 1
HK$251.97
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVBG080N120SC1
Order Code4382111
Product RangeEliteSiC Series
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id30A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-263HV (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max3V
Power Dissipation179W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
30A
Drain Source On State Resistance
0.08ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
3V
Operating Temperature Max
175°C
SVHC
No SVHC (15-Jan-2018)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263HV (D2PAK)
Rds(on) Test Voltage
20V
Power Dissipation
179W
Product Range
EliteSiC Series
Legislation and Environmental
Tariff No:0
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000907