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2N6660
Power MOSFET, N Channel, 60 V, 1.1 A, 2.7 ohm, TO-205AD, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | HK$49.560 |
| 10+ | HK$36.790 |
| 100+ | HK$30.990 |
| 500+ | HK$28.230 |
| 1000+ | HK$26.580 |
Price for:Each
Minimum: 1
Multiple: 1
HK$49.56
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Product Information
ManufacturerSOLID STATE
Manufacturer Part No2N6660
Order Code2295734
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.1A
Drain Source On State Resistance2.7ohm
Transistor Case StyleTO-205AD
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation6.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 2N6660 is a 60V N-channel Enhancement Mode MOSFET designed for use in switching regulators, converters and motor drivers.
Applications
Power Management, Industrial, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.1A
Transistor Case Style
TO-205AD
Rds(on) Test Voltage
10V
Power Dissipation
6.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
2.7ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001102