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| Quantity | Price |
|---|---|
| 5+ | HK$2.200 |
| 50+ | HK$1.710 |
| 100+ | HK$1.210 |
| 500+ | HK$1.010 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
HK$11.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1308EDL-T1-GE3
Order Code2283646
Product RangeE
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id1.4A
Drain Source On State Resistance0.11ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max600mV
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
MSL-
SVHCNo SVHC (07-Nov-2024)
Product Overview
The SI1308EDL-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET with power dissipation at 500mW.
- PWM optimized for fast switching
- 100% Rg Tested
- Up to 1800V ESD protection
- Halogen-free
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.4A
Transistor Case Style
SOT-323
Rds(on) Test Voltage
10V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.11ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
3Pins
Product Range
E
MSL
-
Technical Docs (2)
Alternatives for SI1308EDL-T1-GE3
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000363