ADL8105ACPZN

ADL8105ACPZN is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 5GHz to 20GHz. The ADL8105 provides a typical gain of 27dB at 12GHz to 17GHz, a 1.8dB typical noise figure from 12GHz to 17GHz, a typical output third-order intercept (OIP3) of 30.5dBm at 12GHz to 17GHz, and a saturated output power (PSAT) of up to 20.5dBm, requiring only 90mA from a 5V supply voltage. The power dissipation can be lowered at the expense of OIP3 and output power (POUT). The ADL8105 also features inputs and outputs that are internally matched to 50 ohm. It is also used in applications such as telecommunications, satellite communications, military radar, weather radar, electronic warfare, instrumentation.

• Single positive supply (self biased)
• Frequency range from 5 to 12GHz
• Gain is 29dB typical at (TCASE = 25°C)
• Noise figure is 1.75dB typical at (TCASE = 25°C)
• Input return loss is 13.5dB typical at (TCASE = 25°C)
• Power for 1dB compression is 19dBm typical at (TCASE = 25°C)
• IP3 is 30dBm typical at (measurement taken at POUT per tone = 0dBm)
• Power added efficiency is 21% typical at (measured at PSAT, TCASE = 25°C)
• IDQ current is 90mA typical at (TCASE = 25°C)
• Operating temperature range from -40°C to +85°C, 8-lead LFCSP package

Notes

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party