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Quantity | Price |
---|---|
1+ | HK$1,111.920 |
10+ | HK$972.930 |
50+ | HK$806.140 |
100+ | HK$790.020 |
Product Information
Product Overview
ADL8142-2C-CSL is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 23GHz to 31GHz. It provides a typical gain of 26.5dB, a 1.8dB typical noise figure, and a typical output third-order intercept (OIP3) of 20dBm at 27GHz to 31GHz, requiring only 25mA from a 2V supply voltage. It also features inputs and outputs that are AC-coupled and internally matched to 50 ohm, making it ideal for high-capacity microwave radio applications. It is used in applications such as geosynchronous high throughput satellite (GEO HTS), low Earth orbit (LEO) space payloads, and satellite communication.
- Single positive supply (self biased)
- Wafer diffusion lot traceability, radiation benchmark
- Frequency range from 27 to 31GHz
- Gain variation over temperature is 0.022dB/°C typ at (TC = 25°C, VDD = 2V, and IDQ = 25mA)
- Noise figure is 1.8dB typical at (TC = 25°C, VDD = 2V, and IDQ = 25mA)
- OIP3 is 20dBm typical at (TC = 25°C, VDD = 2V, and IDQ = 25mA)
- Supply current (IDQ) is 25mA typical at (TC = 25°C, VDD = 2V, and IDQ = 25mA)
- Total ionizing dose (TID) is 30krads
- Single event latchup (SEL) is ≥ 62.4MeV-cm2/mg
- Operating temperature range from -55°C to +85°C, 8-pad bare die [CHIP] package
Notes
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Technical Specifications
23GHz
26.5dB
Bare DIE
1.5V
-55°C
-
No SVHC (21-Jan-2025)
31GHz
1.8dB
8Pins
3.5V
85°C
-
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate