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Digital Attenuator, 100 MHz to 40 GHz, 31.5 dB/0.5 dB Step, 5.2 dB Loss, -40 to 105 °C, LGA-EP-24


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Technical Datasheet:
ADRF5730BCCZN   Datasheet
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Product Overview

ADRF5730 is a silicon, 6bit digital attenuator with 31.5dB attenuation control range in 0.5dB steps. This device operates from 100MHz to 40GHz with better than 4.8dB of insertion loss and excellent attenuation accuracy. It has a radio frequency (RF) input power handling capability of 27dBm average and 30dBm peak for all states. It requires a dual supply voltage of +3.3V and -3.3V. This device features serial peripheral interface (SPI), parallel mode control, and complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)- compatible controls. It is pin-compatible with the ADRF5720 low frequency cut-off version, which operates from 9KHz to 40GHz. It is used in application such as industrial scanners, test and instrumentation, cellular infrastructure: 5G millimetre wave, military radios, radars, electronic counter measures (ECMs), microwave radios and very small aperture terminals (VSATs) etc.
  • Low insertion loss with impedance match is 2.1dB typ at (10GHz to 18GHz)
  • Attenuation accuracy with impedance match is ±(0.10 + 0.6% of state)dB typ at (100MHz to 10GHz)
  • Step error is ±0.18dB typ at (10GHz to 18GHz, TCASE = 25°C)
  • Insertion loss state is 30dBm typ at (VDD = 3.3V, VSS = -3.3V)
  • Other attenuation state is 27dBm typ at (VDD = 3.3V, VSS = -3.3V)
  • Third-order intercept is 50dBm typ at (VDD = 3.3V, VSS = -3.3V)
  • Tight distribution in relative phase, no low frequency spurious signals
  • SPI and parallel mode control, CMOS/LVTTL compatible
  • RF settling time (0.1dB of final RF output) is 250ns typ at (VDD = 3.3V, VSS = -3.3V)
  • Operating temperature is -40°C to +105°C, package style is 24-terminal land grid array [LGA]

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Technical Documents (1)

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