HMC326MS8GE

HMC326MS8GE is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifier. It operate between 3GHz and 4.5GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21dB of gain and +26dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE. It is used in application such as microwave radios, broadband radio systems, wireless local loop driver amplifier etc.

• Output third order intercept (IP3) is 36dBm typical
• Output power for 1dB compression (P1dB) is 23.5dBm typical
• Noise figure is 5dB typical
• Switching speed is 10ns typical
• Supply current (Icc) is 130mA typical at (Vpd = 5V)
• Gain variation over temperature is 0.025dB / °C typical
• Operating temperature is -40 to +85 °C
• Package style is 8-lead mini small outline with exposed pad [MINI-SO-EP]

Notes

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party