HMC327MS8GETR

HMC327MS8GE is a high efficiency GaAs InGaP heterojunction bipolar transistor (HBT) MMIC power amplifier which operates between 3GHz and 4GHz. With a minimum of external components, this amplifier provides 21dB of gain, +30dBm of saturated power at 45% PAE from a single +5V supply. Power down capability is available to conserve current consumption when the amplifier is not in use. It is widely used in applications such as wireless local loop, WiMAX & fixed wireless, access points, subscriber equipment etc.

• Power down capability
• Low external part count
• Gain variation over temperature is 0.025dB / °C typ at (TA = +25°C, Vs = 5V, Vctl = 5V)
• Input return loss is 15dB typ at (TA = +25°C, Vs = 5V, Vctl = 5V)
• Output return loss is 8dB typ at (TA = +25°C, Vs = 5V, Vctl = 5V)
• Output power for 1dB compression is 27dBm typ at (TA = +25°C, Vs = 5V, Vctl = 5V)
• Saturated output power is 30dBm typ at (TA = +25°C, Vs = 5V, Vctl = 5V)
• Output third order intercept is 40dBm typ at (TA = +25°C, Vs = 5V, Vctl = 5V)
• Noise figure is 5dB typ at (TA = +25°C), switching speed is 40ns typ at (TA = +25°C)
• Operating temperature is -40°C to +85°C, package style is MSOP

Notes

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party