HMC8411LP2FETR

HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01GHz to 10GHz. The saturated output power (PSAT) of 19.5dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers. It also features inputs and outputs that are internally matched to 50 ohm, making the device ideal for surface mounted technology (SMT)-based, high capacity microwave radio applications. It is used in application such as test instrumentation, military communications etc.

• Gain is 15.5dB typical at (0.01GHz to 1GHz)
• Noise figure is 1.8dB typical at (0.01GHz to 1GHz)
• Output third-order intercept is 33.5dBm typical at (0.01GHz to 1GHz)
• Supply current is 55mA typical
• Supply voltage is 5V typical
• Power added efficiency is 30% typical
• Operating temperature is -40°C to +85°C
• Package style is 6-lead LFCSP

Notes

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party