HMC8411TCPZ-EP-PT

HMC8411TCPZ-EP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01GHz to 10GHz. It provides a typical gain of 15.5dB, a 1.7dB typical noise figure, and a typical output third-order intercept (OIP3) of 34dBm, requiring only 55mA from a 5V supply voltage. The saturated output power (PSAT) of 19.5dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers. It also features inputs and outputs that are internally matched to 50 ohm, making the device ideal for surface mounted technology (SMT)-based, high capacity microwave radio applications. It is used in application such as test instrumentation, military communications etc.

• High gain is 15.5dB typical at (0.01GHz to 1GHz, TA = 25°C)
• Noise figure is 1.8dB typ at (0.01GHz to 1GHz, TA = 25°C)
• Output third-order intercept is 33.5dBm typ at (0.01GHz to 1GHz, TA = 25°C)
• Output power for 1dB compression is 20dBm typ at (0.01GHz to 1GHz, TA = 25°C)
• Saturated output power is 20.5dB typ at (0.01GHz to 1GHz, TA = 25°C)
• Output second-order intercept is 43dBm typ at (0.01GHz to 1GHz, TA = 25°C)
• Input return loss is 22dB typ at (0.01GHz to 1GHz, TA = 25°C)
• Output return loss is 17dB typ at (0.01GHz to 1GHz, TA = 25°C)
• Operating temperature is -55°C to +125°C
• Package style is 6-lead lead frame chip scale [LFCSP]

Notes

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