LTC7065RMSE#PBF

LTC7065RMSE#PBF is a half-bridge dual N-channel MOSFET gate driver that operates at up to 100V input voltage and features a supply-independent three-state PWM input logic. The strong 1.3ohm pull-down and 1.6 ohm pull-up drive capability can drive large gate capacitances of high voltage MOSFETs with short transition times in high switching frequency applications. The adaptive shoot-through protection is designed for optimized efficiency and MOSFET cross-conduction protection. It contains Undervoltage lockout circuits on both the VCC supply and floating driver supply that turn off the external MOSFETs when activated. It is used in applications such as industrial power systems, half-bridge DC/DC converters, and telecommunication power systems.

• 115V absolute maximum voltage, 6V to 14V VCC and bottom gate driver voltage
• 4V to 14V top gate driver voltage, adaptive shoot-through protection
• Three-state PWM input with enable pin, VCC UVLO and floating supply UVLO
• VCC supply current is 150µA typical at (TA = 25°C, VCC = VBST = 10V, VSW = 0V)
• UVLO hysteresis is 0.3V typical at (TA = 25°C, VCC = VBST = 10V, VSW = 0V)
• Total BST current is 9µA typical at (no switching, TG = low)
• BG low to TG high propagation delay is 37nsec typical at (TA = 25°C, VCC = VBST = 10V, VSW = 0V)
• EN high to TG/BG high propagation delay is 35ns typical at (TA = 25°C)
• Operating temperature range from -40°C to 150°C
• 10-lead plastic MSOP package

Notes

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