CY62167EV18LL-55BVXI

CY62167EV18LL-55BVXI is a high-performance CMOS static RAM organized as 1M words by 16 bits. This device features an advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. This device also has an automatic power-down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (active-low CE1 HIGH or CE2 LOW or both active-low BHE and active-low BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: the device is deselected (active-low CE1 HIGH or CE2 LOW); outputs are disabled (active-low OE HIGH); both Byte High Enable and Byte Low Enable are disabled (active-low BHE, active-low BLE HIGH); and a write operation is in progress (active-low CE1 LOW, CE2 HIGH and active-low WE LOW).

• VCC range is 1.8V typical, 16Mbit density, 16 bus width, 55ns speed
• Easy memory expansion with active-low CE1, CE2, and active-low OE features
• Automatic power down when deselected
• CMOS for optimum speed and power
• Input leakage current is +1µA maximum at (GND < VI < VCC)
• VCC operating supply current is 25mA typical at (f = fmax = 1/tRC)
• Output leakage current is +1µA maximum at (GND < VO < VCC, output disabled)
• Input capacitance is 10pF maximum at (TA = 25°C, f = 1MHz, VCC = VCC)
• 1.5µA typ automatic power down current – CMOS inputs at (active-low CE1 > VCC – 0.2V or CE2 < 0.2V)
• Industrial ambient temperature range from -40°C to +85°C, 48-pin VFBGA package