CY7C1019D-10VXI

CY7C1019D-10VXI is a high-performance CMOS 1-Mbit (128 K × 8), static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (active low CE), an active LOW output enable (active low OE), and tri-state driver. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Write to the device by taking chip enable (active low CE) and write enable (active low WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins (A0 through A16). Read from the device by taking chip enable (active low CE) and output enable (active low OE) LOW while forcing write enable (WE) HIGH. Under this condition, the contents of the memory location specified by the address pins appears on the IO pins.

• 1-Mbit density, × 8-bits data width, C9, 90nm technology, 10ns speed
• Pin- and function-compatible with CY7C1019B
• VCC operating supply current is 80mA max (100MHz, VCC=Max, IOUT=0mA, f=fmax=1/tRC)
• Automatic CE power down current – CMOS inputs is 3mA max (Max VCC, -0.3V)
• VCC for data retention is 2.0V min, VCC is 5V±0.5V
• Automatic power-down when deselected, CMOS for optimum speed/power
• Centre power/ground pinout, functionally equivalent to CY7C1019B
• Input capacitance is 6pF max, output capacitance is 8pF max (TA=25°C, f=1MHz, VCC=5.0V)
• 32-pin moulded SOJ package, industrial temperature range from -40 to +85°C