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BSS8402DW-7-F
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 115 mA, 115 mA, 13.5 ohm
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| Quantity | Price |
|---|---|
| 5+ | HK$3.280 |
| 50+ | HK$2.660 |
| 100+ | HK$2.040 |
| 500+ | HK$1.430 |
| 1500+ | HK$1.410 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 5
HK$16.40
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBSS8402DW-7-F
Order Code1713834
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel115mA
Continuous Drain Current Id P Channel115mA
Drain Source On State Resistance N Channel13.5ohm
Drain Source On State Resistance P Channel13.5ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel200mW
Power Dissipation P Channel200mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
BSS8402DW-7-F is a complementary pair enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and maintains superior switching performance, making it ideal for high efficiency power management applications. Typical applications include general purpose interfacing switch, power management functions, analogue switch.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Low input/output leakage, complementary pair
- Drain source voltage is 60V at TA = +25°C, P/N channel
- Continuous drain current is 115mA at TA = +25°C, P/N channel
- Drain source on state resistance is 13.5ohm at TA = +25°C, P/N channel
- Power dissipation is 200mW at TA = +25°C, P/N channel
- SOT363 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
115mA
Drain Source On State Resistance P Channel
13.5ohm
No. of Pins
6Pins
Power Dissipation P Channel
200mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
115mA
Drain Source On State Resistance N Channel
13.5ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006