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DMG1012T-7
Power MOSFET, N Channel, 20 V, 630 mA, 0.3 ohm, SOT-523, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 46 week(s)
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| Quantity | Price |
|---|---|
| 3000+ | HK$0.428 |
| 9000+ | HK$0.379 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
HK$1,284.00
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG1012T-7
Order Code4318478
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id630mA
Drain Source On State Resistance0.3ohm
Transistor Case StyleSOT-523
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation280mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
630mA
Transistor Case Style
SOT-523
Rds(on) Test Voltage
4.5V
Power Dissipation
280mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.3ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000053