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DMN30H4D0LFDE-7
Power MOSFET, N Channel, 300 V, 550 mA, 4 ohm, U-DFN2020, Surface Mount
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199 In Stock
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| Quantity | Price |
|---|---|
| 100+ | HK$2.680 |
| 500+ | HK$1.850 |
| 1500+ | HK$1.820 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$268.00
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN30H4D0LFDE-7
Order Code3680131RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id550mA
Drain Source On State Resistance4ohm
Transistor Case StyleU-DFN2020
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation1.98W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
550mA
Transistor Case Style
U-DFN2020
Rds(on) Test Voltage
10V
Power Dissipation
1.98W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
300V
Drain Source On State Resistance
4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000121