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DMN53D0LDWQ-7
Dual MOSFET, N Channel, 50 V, 50 V, 460 mA, 460 mA, 1.6 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN53D0LDWQ-7
Order Code3589337RL
Your Part Number
Technical Datasheet
Packaging Options
1,360 In Stock
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| Quantity | Price |
|---|---|
| 100+ | HK$1.520 |
| 500+ | HK$1.240 |
| 1000+ | HK$0.847 |
| 5000+ | HK$0.727 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
HK$152.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN53D0LDWQ-7
Order Code3589337RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel50V
Drain Source Voltage Vds50V
Drain Source Voltage Vds P Channel50V
Continuous Drain Current Id460mA
Continuous Drain Current Id N Channel460mA
On Resistance Rds(on)1ohm
Continuous Drain Current Id P Channel460mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel1.6ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage10V
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1.5V
No. of Pins6Pins
Power Dissipation Pd400mW
Power Dissipation N Channel400mW
Power Dissipation P Channel400mW
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
50V
Drain Source Voltage Vds P Channel
50V
Continuous Drain Current Id N Channel
460mA
Continuous Drain Current Id P Channel
460mA
Drain Source On State Resistance N Channel
1.6ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.5V
Power Dissipation Pd
400mW
Power Dissipation P Channel
400mW
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds
50V
Continuous Drain Current Id
460mA
On Resistance Rds(on)
1ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
400mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000121