Print Page
Image is for illustrative purposes only. Please refer to product description.
230,805 In Stock
Need more?
230805 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 5+ | HK$0.697 |
| 50+ | HK$0.509 |
| 100+ | HK$0.320 |
| 500+ | HK$0.314 |
| 1500+ | HK$0.308 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
HK$3.48
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN65D8L-7
Order Code2543546
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id310mA
Drain Source On State Resistance3ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation370mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMN65D8L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include DC-DC converters, power-management functions, battery-operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Small surface-mount package, ESD protected gate
- Drain-source voltage is 60V at TA = +25°C
- Gate-source voltage is ±20V at TA = +25°C
- Continuous drain current is 310mA at TA = +25°C, steady state, VGS = 10V
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 800mA at TA = +25°C
- Total power dissipation is 370mW at TA = +25°C
- SOT23 (standard) package
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
310mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
370mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
3ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for DMN65D8L-7
2 Products Found
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005