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DMP6180SK3-13
Power MOSFET, P Channel, 60 V, 14 A, 0.11 ohm, TO-252 (DPAK), Surface Mount
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| Quantity | Price |
|---|---|
| 100+ | HK$2.930 |
| 500+ | HK$2.550 |
| 1000+ | HK$2.230 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
HK$293.00
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMP6180SK3-13
Order Code3577038RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id14A
Drain Source On State Resistance0.11ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
DMP6180SK3-13 is a P-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include power management functions, DC-DC converters and analogue switches.
- Low on-resistance, low input capacitance
- Drain-source voltage is -60V at TA = +25°C
- Gate-source voltage is ±20V at TA = +25°C
- Continuous drain current is -14A at TC = +25°C, VGS = -10V, steady state
- Pulsed drain current (10μs pulse, duty cycle = 1%) is -25A at TA = +25°C
- Total power dissipation is 1.7W at TA = +25°C
- Static drain-source on-resistance is 110mohm max at VGS = -10V, ID = -12A, TA = +25°C
- Maximum body diode forward current is -4.1A at TA = +25°C
- TO252 (DPAK) package
- Operating and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
14A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.11ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002