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                    • Reduced Price
                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Dual MOSFETs
                      Print Page

                      AUIRF7343QTR

                      Dual MOSFET, Complementary N and P Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm

                      INFINEON AUIRF7343QTR
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerINFINEON
                      Manufacturer Part NoAUIRF7343QTR
                      Order Code2803372RL
                      Product RangeHEXFET Series
                      Also Known AsAUIRF7343QTR, SP001517450
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      Packaging Options
                      12,765 In Stock

                      Need more?

                      12765 Delivery in 3-4 Business Days(UK stock)
                      Available until stock is exhausted
                      QuantityPrice
                      100+HK$10.700
                      500+HK$9.560
                      1000+HK$8.820
                      Price for:Each (Supplied on Cut Tape)
                      Minimum: 100
                      Multiple: 1
                      HK$1,070.00
                      Add Part No. / Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerINFINEON
                      Manufacturer Part NoAUIRF7343QTR
                      Order Code2803372RL
                      Product RangeHEXFET Series
                      Also Known AsAUIRF7343QTR, SP001517450
                      Technical Datasheet

                      Data Sheet

                      Transistor PolarityComplementary N and P Channel
                      Channel TypeComplementary N and P Channel
                      Drain Source Voltage Vds55V
                      Continuous Drain Current Id4.7A
                      On Resistance Rds(on)0.043ohm
                      Transistor MountingSurface Mount
                      Rds(on) Test Voltage10V
                      Transistor Case StyleSOIC
                      Gate Source Threshold Voltage Max1V
                      Power Dissipation Pd2W
                      Product RangeHEXFET Series
                      QualificationAEC-Q101
                      Automotive Qualification StandardAEC-Q101

                      Product Overview

                      • Automotive HEXFET® power MOSFET
                      • Automotive qualified
                      • Advanced planar technology
                      • Ultra-low on-resistance
                      • Logic level gate drive
                      • Dual N and P channel MOSFET

                      Warnings

                      Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

                      Technical Specifications

                      Transistor Polarity

                      Complementary N and P Channel

                      Drain Source Voltage Vds

                      55V

                      On Resistance Rds(on)

                      0.043ohm

                      Rds(on) Test Voltage

                      10V

                      Gate Source Threshold Voltage Max

                      1V

                      Product Range

                      HEXFET Series

                      Automotive Qualification Standard

                      AEC-Q101

                      Channel Type

                      Complementary N and P Channel

                      Continuous Drain Current Id

                      4.7A

                      Transistor Mounting

                      Surface Mount

                      Transistor Case Style

                      SOIC

                      Power Dissipation Pd

                      2W

                      Qualification

                      AEC-Q101

                      Technical Docs (2)

                      Technical Data Sheet EN

                      EOL Notices EN

                      Legislation and Environmental

                      Country of Origin:
                      Country in which last significant manufacturing process was carried outCountry of Origin:
                      Malaysia
                      Country in which last significant manufacturing process was carried out
                      Tariff No:85412900
                      US ECCN:EAR99
                      EU ECCN:NLR
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Weight (kg):.000227
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                      e絡盟 is a trading name of eluomeng Limited.
                      Registered number: 559890 | Registered office: 21st Floor, Tower 2, Enterprise Square Five, 38 Wang Chiu Road, Kowloon Bay, Kowloon, Hong Kong.