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BF998E6327HTSA1
RF FET Transistor, 12 V, 30 mA, 200 mW, TO-252
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBF998E6327HTSA1
Order Code2480770RL
Also Known AsBF 998 E6327, SP000010978
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoBF998E6327HTSA1
Order Code2480770RL
Also Known AsBF 998 E6327, SP000010978
Technical Datasheet
Drain Source Voltage Vds12V
Continuous Drain Current Id30mA
Power Dissipation200mW
Operating Frequency Min-
Operating Frequency Max-
Transistor Case StyleTO-252
No. of Pins4Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSL-
SVHCNo SVHC (23-Jan-2024)
Product Overview
Notes
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Drain Source Voltage Vds
12V
Power Dissipation
200mW
Operating Frequency Max
-
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Continuous Drain Current Id
30mA
Operating Frequency Min
-
Transistor Case Style
TO-252
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000635