BGA5H1BN6E6327XTSA1

BGA5H1BN6E6327XTSA1 is a high gain, low noise amplifier for LTE high band. The LTE data rate can be significantly improved by using the low noise amplifier. The device features a single-line two-state control (Bypass- and High gain-Mode). OFF-state can be enabled by powering down VCC. The integrated bypass function increases the overall system dynamic range and leads to more flexibility in the RF front end. In high gain mode, the LNA offers the best noise figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.

• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
• RF output internally matched to 50 ohm
• Low external component count
• B9HF silicon germanium technology
• Supply voltage range from 1.5 to 3.6V at TA=25°C, VCC=1.8V, VC, BP=1.8V, VC, OFF=0V, f=2300-2690MHz
• Insertion power gain is 18.1dB typ at high gain mode, f=2500MHz, VCC=1.8V
• Operating frequency range from 2300 to 2690MHz
• 8.5mA supply current typ (high gain mode, TA=25°C, VCC=1.8V, VC,BP=1.8V, VC,OFF=0V, f=2300-2690MHz)
• Ultra small TSNP-6-10 leadless package
• Ambient temperature range from -40 to 85°C

Warnings

Stresses above the maximum values listed here may cause permanent damage to the device.