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BSC112N06LDATMA1
Dual MOSFET, N Channel, 60 V, 60 V, 20 A, 20 A, 0.0112 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC112N06LDATMA1
Order Code3577276RL
Product RangeOptiMOS-T2 Series
Also Known AsBSC112N06LD, SP002594372
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | HK$7.930 |
| 500+ | HK$6.320 |
| 1000+ | HK$5.900 |
| 5000+ | HK$4.920 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$793.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC112N06LDATMA1
Order Code3577276RL
Product RangeOptiMOS-T2 Series
Also Known AsBSC112N06LD, SP002594372
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id20A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.0095ohm
Continuous Drain Current Id N Channel20A
Continuous Drain Current Id P Channel20A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0112ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleTDSON
Gate Source Threshold Voltage Max1.7V
No. of Pins8Pins
Power Dissipation Pd65W
Power Dissipation N Channel65W
Power Dissipation P Channel65W
Operating Temperature Max175°C
Product RangeOptiMOS-T2 Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
20A
On Resistance Rds(on)
0.0095ohm
Continuous Drain Current Id P Channel
20A
Drain Source On State Resistance N Channel
0.0112ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1.7V
Power Dissipation Pd
65W
Power Dissipation P Channel
65W
Product Range
OptiMOS-T2 Series
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
20A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
TDSON
No. of Pins
8Pins
Power Dissipation N Channel
65W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000209