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BSZ215CHXTMA1
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 5.1 A, 5.1 A, 0.041 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSZ215CHXTMA1
Order Code3294674RL
Product RangeOptiMOS 2 Series
Also Known AsBSZ215C H, SP001277210
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | HK$6.980 |
| 500+ | HK$5.150 |
| 1000+ | HK$4.550 |
| 5000+ | HK$4.360 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$698.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ215CHXTMA1
Order Code3294674RL
Product RangeOptiMOS 2 Series
Also Known AsBSZ215C H, SP001277210
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id5.1A
On Resistance Rds(on)0.041ohm
Continuous Drain Current Id N Channel5.1A
Continuous Drain Current Id P Channel5.1A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.041ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.041ohm
Transistor Case StyleTSDSON
Gate Source Threshold Voltage Max1.1V
Power Dissipation Pd2.5W
No. of Pins8Pins
Power Dissipation N Channel2.5W
Power Dissipation P Channel2.5W
Operating Temperature Max175°C
Product RangeOptiMOS 2 Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.041ohm
Continuous Drain Current Id P Channel
5.1A
Drain Source On State Resistance N Channel
0.041ohm
Drain Source On State Resistance P Channel
0.041ohm
Gate Source Threshold Voltage Max
1.1V
No. of Pins
8Pins
Power Dissipation P Channel
2.5W
Product Range
OptiMOS 2 Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
5.1A
Continuous Drain Current Id N Channel
5.1A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
TSDSON
Power Dissipation Pd
2.5W
Power Dissipation N Channel
2.5W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000109