CY62137FV30LL-55ZSXE

CY62137FV30LL-55ZSXE is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features an advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (active low CE HIGH or both active low BLE and active lowBHE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state in the following conditions when the device is deselected (active low CE HIGH), the outputs are disabled (active low OE HIGH), both the Byte High Enable and the Byte Low Enable are disabled (active low BHE, active low BLE HIGH), or during an active write operation (active low CE LOW and WE LOW).

• VCC range from 2.2 to 3.6V, read cycle time is 55ns min, write cycle time is 55ns min
• Easy memory expansion with active low CE and active low OE features
• Automatic power down when deselected, byte power down feature
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• Input capacitance is 10pF max (TA = 25°C, f = 1MHz, VCC = VCC(typ))
• Output capacitance is 10pF max (TA = 25°C, f = 1MHz, VCC = VCC(typ))
• Output leakage current range from -4 to +4µA (GND < VO < VCC, Output disabled)
• Input leakage current range from -4 to +4µA (GND < VI < VCC)
• Output low voltage range is 0.4V max (2.2 < VCC < 2.7, IOL = 0.1mA)
• 44-pin TSOP II package, automotive-E temperature range from -40°C to +125°C