CY7C1021DV33-10VXI
SRAM, 1 Mbit, 64K x 16bit, 10ns, 2.97V to 3.63V, SOJ-44
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| Quantity | Price |
|---|---|
| 1+ | HK$23.830 |
| 10+ | HK$20.630 |
| 25+ | HK$19.450 |
| 50+ | HK$19.140 |
| 100+ | HK$18.830 |
| 250+ | HK$17.890 |
| 500+ | HK$17.270 |
| 1000+ | HK$16.850 |
Product Information
Product Overview
CY7C1021DV33-10VXI is a CY7C1021DV33 high-performance CMOS static RAM organized as 65536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking chip enable active-low (CE) and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A15). If byte high enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A15).
- Pin-and function-compatible with CY7C1021CV33
- High speed is tAA = 10ns
- Low active power ICC = 60 mA at 10ns
- Low active power ICC = 60mA at 10ns
- 2.0V data retention
- Automatic power-down when deselected
- CMOS for optimum speed/power, independent control of upper and lower bits
- 44-pin (400-Mil) moulded SOJ package
- Industrial ambient temperature range from –40°C to +85°C
Technical Specifications
Asynchronous SRAM
1Mbit
64K x 16bit
SOJ
44Pins
10ns
3.3V
Surface Mount
85°C
-
1Mbit
64K x 16bit
3V to 3.6V
SOJ
3V
3.6V
-
-40°C
-
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate