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Product Information
Product Overview
EVAL1ED3142MU12FSICTOBO1 is an evaluation board for 1ED3142MU12F - 2300V, 6.5A, 3KV (RMS) single-channel isolated gate driver. This is in half-bridge configuration with two gate driver ICs (1ED3142MU12F) to drive power switches such as IGBTs, MOSFETs and SiC MOSFETs. This board comes pre-populated with two CoolSiC™ MOSFET IMZA120R020M1H, an additional gate driver IC is used for isolated over-current feedback signal from high voltage side to logic control side, fast operational amplifier is used as comparator for over-current detection. It is best suited for double-pulse testing. Typical applications include EV charging, motor control, photovoltaic, server power supplies and Uninterruptible power supplies (UPS).
- EiceDRIVER™ Compact single channel isolated gate driver 1ED31xx family (X3 compact family)
- For use with 650V/1200V/1700V/2300V/ IGBTs, Si and SiC MOSFETs
- 2300V functional offset voltage capable for selected applications
- Galvanically isolated coreless transformer gate driver
- 6.5A typical sinking and sourcing peak output current
- 35V absolute maximum output supply voltage and 45ns propagation delay with 20ns input filter
- High common-mode transient immunity CMTI >300KV/μs
- Separate source and sink outputs, short-circuit clamping and active shutdown
- Integrated filters reduce the need of external filters
- Suitable for operation at high ambient temperature and in fast switching applications
Technical Specifications
Infineon
Power Management
Evaluation Board 1ED3142MU12F
No SVHC (21-Jan-2025)
1ED3142MU12F
IGBT/MOSFET Gate Driver
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Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate