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F410MR20W3M1HB11BPSA1
Silicon Carbide MOSFET, N Channel, 95 A, 2 kV, 0.0133 ohm, Module
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ManufacturerINFINEON
Manufacturer Part NoF410MR20W3M1HB11BPSA1
Order Code4680826
Product RangeEasyPACK Series
Also Known AsF4-10MR20W3M1H_B11, SP005596760
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | HK$3,754.160 |
| 5+ | HK$3,246.580 |
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Multiple: 1
HK$3,754.16
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Product Information
ManufacturerINFINEON
Manufacturer Part NoF410MR20W3M1HB11BPSA1
Order Code4680826
Product RangeEasyPACK Series
Also Known AsF4-10MR20W3M1H_B11, SP005596760
Technical Datasheet
MOSFET Module Configuration-
Channel TypeN Channel
Continuous Drain Current Id95A
Drain Source Voltage Vds2kV
Drain Source On State Resistance0.0133ohm
Transistor Case StyleModule
No. of Pins50Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.15V
Power Dissipation-
Operating Temperature Max175°C
Product RangeEasyPACK Series
SVHCNo SVHC (21-Jan-2025)
Product Overview
F410MR20W3M1HB11BPSA1 is an EasyPACK™ module with CoolSiC™ Trench MOSFET and PressFIT / NTC. Potential applications include EV charging, energy storage systems (ESS), solar applications, and DC/DC converters.
- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
- Overload operation up to 175°C
- Integrated NTC temperature sensor, PressFIT contact technology
- Drain-source voltage is 2000V at Tvj = 25°C
- Continuous DC drain current is 95A at Tvj = 175°C, VGS = 18V, TH = 65°C
- Repetitive peak drain current is 240A ( verified by design, tp limited by Tvjmax)
- Drain-source on-resistance is 8.6mohm typ at VGS = 18V, Tvj = 25°C, ID = 120A
- Total gate charge is 0.47µC typ at VDD = 1200V, VGS = -3V, Tvj = 25°C
- Drain-source leakage current is 0.02µA typ at VDS = 2000V, VGS = -3V, Tvj = 25°C
- Storage temperature range from -40 to 125°C
Technical Specifications
MOSFET Module Configuration
-
Continuous Drain Current Id
95A
Drain Source On State Resistance
0.0133ohm
No. of Pins
50Pins
Gate Source Threshold Voltage Max
5.15V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
2kV
Transistor Case Style
Module
Rds(on) Test Voltage
18V
Power Dissipation
-
Product Range
EasyPACK Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001