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IGC025S08S1XTMA1
Gallium Nitride (GaN) Transistor, 80 V, 86 A, 2500 µohm, 12 nC, TSON, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIGC025S08S1XTMA1
Order Code4680816RL
Also Known AsIGC025S08S1, SP006027447
Technical Datasheet
Technical Specifications
Drain Source Voltage Vds
80V
Drain Source On State Resistance
2500µohm
No. of Pins
6Pins
Continuous Drain Current Id
86A
Typical Gate Charge
12nC
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001