Print Page
IGT65R045D2ATMA1
Gallium Nitride (GaN) Transistor, 650 V, 38 A, 0.054 ohm, 6 nC, HSOF, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIGT65R045D2ATMA1
Order Code4695747RL
Also Known AsIGT65R045D2, SP005965880
Technical Datasheet
1,500 In Stock
Need more?
1500 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 10+ | HK$49.800 |
| 50+ | HK$46.420 |
| 100+ | HK$42.420 |
| 250+ | HK$41.580 |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
HK$498.00
Add Part No. / Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIGT65R045D2ATMA1
Order Code4695747RL
Also Known AsIGT65R045D2, SP005965880
Technical Datasheet
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001