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IMBG65R007M2HXTMA1
Silicon Carbide MOSFET, Single, N Channel, 238 A, 650 V, 0.0061 ohm, TO-263 (D2PAK)
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ManufacturerINFINEON
Manufacturer Part NoIMBG65R007M2HXTMA1
Order Code4378732
Product RangeCoolSiC G2 Series
Also Known AsIMBG65R007M2H, SP005912570
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | HK$204.930 |
| 5+ | HK$191.490 |
| 10+ | HK$178.050 |
| 50+ | HK$168.720 |
| 100+ | HK$159.390 |
| 250+ | HK$155.120 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
HK$204.93
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG65R007M2HXTMA1
Order Code4378732
Product RangeCoolSiC G2 Series
Also Known AsIMBG65R007M2H, SP005912570
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id238A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.0061ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max5.6V
Power Dissipation789W
Operating Temperature Max175°C
Product RangeCoolSiC G2 Series
SVHCNo SVHC (21-Jan-2025)
Product Overview
IMBG65R007M2HXTMA1 is a CoolSiC MOSFET in a 7 pin TO-263 package. Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfil the ever-growing system and market needs. Typical applications include SMPS, solar PV inverters, energy storage and battery formation, UPS, EV charging infrastructure and motor drives.
- Ultra-low switching losses
- Benchmark gate threshold voltage VGS(th) = 4.5V
- Robust against parasitic turn-on even with 0V turn-off gate voltage
- Flexible driving voltage and compatible with bipolar driving scheme
- Robust body diode operation under hard commutation events
- Enables high efficiency and high power density designs
- Facilitates great ease of use and integration
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
238A
Drain Source On State Resistance
0.0061ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
20V
Power Dissipation
789W
Product Range
CoolSiC G2 Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001