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IMBG65R033M2HXTMA1
Silicon Carbide MOSFET, Single, N Channel, 58 A, 650 V, 0.03 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMBG65R033M2HXTMA1
Order Code4640388RL
Also Known AsIMBG65R033M2H, SP006051145
Technical Datasheet
92 In Stock
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92 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 10+ | HK$50.420 |
| 50+ | HK$47.210 |
| 100+ | HK$44.450 |
| 250+ | HK$44.180 |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
HK$504.20
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG65R033M2HXTMA1
Order Code4640388RL
Also Known AsIMBG65R033M2H, SP006051145
Technical Datasheet
Continuous Drain Current Id58A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.03ohm
No. of Pins7Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max5.6V
Power Dissipation227W
Operating Temperature Max175°C
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Continuous Drain Current Id
58A
Drain Source On State Resistance
0.03ohm
Rds(on) Test Voltage
20V
Power Dissipation
227W
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
650V
No. of Pins
7Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001