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IMZA120R030M1HXKSA1
Silicon Carbide MOSFET, Single, N Channel, 70 A, 1.2 kV, 0.0409 ohm, TO-247
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ManufacturerINFINEON
Manufacturer Part NoIMZA120R030M1HXKSA1
Order Code4376969
Product RangeCoolSiC Trench Series
Also Known AsIMZA120R030M1H, SP005425985
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | HK$120.260 |
| 5+ | HK$113.110 |
| 10+ | HK$105.960 |
| 50+ | HK$97.330 |
| 100+ | HK$88.700 |
| 250+ | HK$86.930 |
Price for:Each
Minimum: 1
Multiple: 1
HK$120.26
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMZA120R030M1HXKSA1
Order Code4376969
Product RangeCoolSiC Trench Series
Also Known AsIMZA120R030M1H, SP005425985
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id70A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0409ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.2V
Power Dissipation273W
Operating Temperature Max175°C
Product RangeCoolSiC Trench Series
SVHCNo SVHC (21-Jan-2025)
Product Overview
IMZA120R030M1HXKSA1 is a CoolSiC™ 1200V SiC Trench MOSFET. Suitable for General purpose drives (GPD), EV-charging, online UPS/industrial UPS, string inverter and solar power optimizer applications.
- Silicon carbide MOSFET with .XT interconnection technology
- 1200V VDSS at Tvj = 25°C and 70A IDDC at Tc = 25°C
- RDS(on) = 30mohm at VGS = 18V, Tvj = 25°C
- Very low switching losses
- Short circuit withstand time 3µs
- Benchmark gate threshold voltage, VGS(th) = 4.2V
- Robust against parasitic turn on, 0V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- XT interconnection technology for best-in-class thermal performance
- 4 pin TO-247 package, virtual junction temperature range from -55 to 175°C
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
70A
Drain Source On State Resistance
0.0409ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
5.2V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
273W
Product Range
CoolSiC Trench Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001