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IPB100N06S2L05ATMA2
Power MOSFET, N Channel, 55 V, 100 A, 0.0032 ohm, TO-263 (D2PAK), Surface Mount
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB100N06S2L05ATMA2
Order Code3703571
Product RangeOptiMOS
Also Known AsIPB100N06S2L-05, SP001067944
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id100A
Drain Source On State Resistance0.0032ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2018)
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.0032ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Product Range
OptiMOS
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002