IPB108N15N3GATMA1
Power MOSFET, N Channel, 150 V, 83 A, 0.0091 ohm, TO-263 (D2PAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | HK$27.540 |
| 10+ | HK$19.080 |
| 100+ | HK$14.550 |
| 500+ | HK$13.160 |
| 1000+ | HK$12.680 |
Product Information
Product Overview
The IPB108N15N3 G is an OptiMOS™ N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated 2
- Environmentally friendly
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Normal level
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, Automotive, Communications & Networking, Audio
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
83A
TO-263 (D2PAK)
10V
214W
175°C
-
No SVHC (21-Jan-2025)
150V
0.0091ohm
Surface Mount
3V
3Pins
-
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate