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IPB60R360P7ATMA1
Power MOSFET, N Channel, 600 V, 9 A, 0.305 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPB60R360P7ATMA1
Order Code2841647
Product RangeCoolMOS P7
Also Known AsIPB60R360P7, SP001664948
Technical Datasheet
12,133 In Stock
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12133 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | HK$13.240 |
| 10+ | HK$10.470 |
| 50+ | HK$8.780 |
| 200+ | HK$8.390 |
| 500+ | HK$7.340 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
HK$13.24
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB60R360P7ATMA1
Order Code2841647
Product RangeCoolMOS P7
Also Known AsIPB60R360P7, SP001664948
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id9A
Drain Source On State Resistance0.305ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation41W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS P7
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
600V CoolMOS™ P7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC silverbox, adapter, LCD & PDP TV, lighting, server, telecom and UPS.
- Suitable for hard and soft switching due to an outstanding commutation ruggedness
- Significant reduction of switching and conduction losses
- Excellent ESD robustness <gt/>2KV (HBM) for all products
- Best in class RDS(on)/package
- Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages
- Simplified thermal management due to low switching and conduction losses
- Increased power density solutions
- Suitable for a wide variety of applications and power ranges
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
41W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.305ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
CoolMOS P7
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001