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IPB80N06S2L11ATMA2
Power MOSFET, N Channel, 55 V, 80 A, 0.0107 ohm, TO-263 (D2PAK), Surface Mount
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1,000 In Stock
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| Quantity | Price |
|---|---|
| 100+ | HK$10.610 |
| 500+ | HK$8.880 |
| 1000+ | HK$7.210 |
| 5000+ | HK$7.190 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$1,061.00
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB80N06S2L11ATMA2
Order Code4589022RL
Technical Datasheet
Drain Source Voltage Vds55V
Continuous Drain Current Id80A
Drain Source On State Resistance0.0107ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation158W
No. of Pins3Pins
Operating Temperature Max175°C
Technical Specifications
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.0107ohm
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
SVHC
No SVHC (21-Jan-2025)
Continuous Drain Current Id
80A
Rds(on) Test Voltage
10V
Power Dissipation
158W
Operating Temperature Max
175°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001